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  ? semiconductor components industries, llc, 2003 august, 2003 ? rev. 3 1 publication order number: mpsa92/d mpsa92, mpsa93 mpsa92 is a preferred device high voltage transistors pnp silicon maximum ratings rating symbol value unit collector ?emitter voltage mpsa93 mpsa92 v ceo ?200 ?300 vdc collector ?base voltage mpsa93 mpsa92 v cbo ?200 ?300 vdc emitter ?base voltage v ebo ?5.0 vdc collector current ? continuous i c ?500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 w mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient r  ja 200 c/w thermal resistance, junction?to?case r  jc 83.3 c/w device package shipping ordering information mpsa92 to?92 to?92 case 29 styles 1, 14 5000 units/box collector 3 2 base 1 emitter mpsa92rlra to?92 2000/tape & reel style 1 mpsa92, mpsa93 marking diagram mps a9x yww mpsa9 = specific device code x = 2 or 2 y = year w = work week 3 2 1 preferred devices are recommended choices for future use and best overall value. mpsa92rlre to?92 2000/tape & reel mpsa92rlrm to?92 2000/ammo pack mpsa92rlrp to?92 2000/ammo pack mpsa93 to?92 5000 units/box mpsa93rlra to?92 2000/tape & reel mpsa93rlrm to?92 2000/ammo pack http://onsemi.com
mpsa92, mpsa93 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (note 1) (i c = ?1.0 madc, i b = 0) mpsa92 mpsa93 v (br)ceo ?300 ?200 ? ? vdc collector ?base breakdown voltage (i c = ?100  adc, i e = 0) mpsa92 mpsa93 v (br)cbo ?300 ?200 ? ? vdc emitter ?base breakdown voltage (i e = ?100  adc, i c = 0) v (br)ebo ?5.0 ? vdc collector cutoff current (v cb = ?200 vdc, i e = 0) mpsa92 (v cb = ?160 vdc, i e = 0) mpsa93 i cbo ? ? ?0.25 ?0.25  adc emitter cutoff current (v eb = ?3.0 vdc, i c = 0) i ebo ? ?0.1  adc on characteristics (note 1) dc current gain (i c = ?1.0 madc, v ce = ?10 vdc) all types (i c = ?10 madc, v ce = ?10 vdc) all types (i c = ?30 madc, v ce = ?10 vdc) mpsa92 mpsa93 h fe 25 40 25 25 ? ? ? ? ? collector ?emitter saturation voltage (i c = ?20 madc, i b = ?2.0 madc) mpsa92 mpsa93 v ce(sat) ? ? ?0.5 ?0.4 vdc base?emitter saturation voltage (i c = ?20 madc, i b = ?2.0 madc) v be(sat) ? ?0.9 vdc small?signal characteristics current ?gain ? bandwidth product (i c = ?10 madc, v ce = ?20 vdc, f = 100 mhz) f t 50 ? mhz collector?base capacitance (v cb = ?20 vdc, i e = 0, f = 1.0 mhz) mpsa92 mpsa93 c cb ? ? 6.0 8.0 pf 1. pulse test: pulse width  300  s, duty cycle  2%.
mpsa92, mpsa93 http://onsemi.com 3 figure 1. dc current gain figure 2. capacitance i c , collector current (ma) 150 90 70 50 30 10 t j = 25 c v ce = 20 vdc f = 20 mhz f, current-gain  bandwidth (mhz) t 1 figure 3. current?gain ? bandwidth 130 21 c, capacitance (pf) v r , reverse voltage (volts) 0.1 100 0.1 10 1.0 10 1000 c ib @ 1mhz 100 1.0 c cb @ 1mhz i c , collector current (ma) v, voltage (volts) 1.4 0.0 1.2 1.0 0.8 0.6 0.4 0.2 100 10 0.1 1.0 110 3579 19 17 15 13 11 v be(on) @ 25 c, v ce = 10 v v ce(sat) @ 25 c, i c /i b = 10 v be(sat) @ 25 c, i c /i b = 10 v ce(sat) @ 125 c, i c /i b = 10 v ce(sat) @ ?55 c, i c /i b = 10 v be(sat) @ 125 c, i c /i b = 10 v be(sat) @ ?55 c, i c /i b = 10 v be(on) @ 125 c, v ce = 10 v v be(on) @ ?55 c, v ce = 10 v figure 4. oono voltages i c , collector current (ma) 300 0.1 1.0 10 250 200 150 0 h fe , dc current gain t j = +125 c 25 c -55 c v ce = 10 vdc 100 50 100
mpsa92, mpsa93 http://onsemi.com 4 package dimensions to?92 to?226aa case 29?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 14: pin 1. emitter 2. collector 3. base style 1: pin 1. emitter 2. base 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mpsa92/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com n. american technical support : 800?282?9855 toll free usa/canada


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